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AlGaAs-GaAs buried heterostructure laser with vertically etched facets and wide-bandgap optical windows by in situ C2H5Cl gas-phase etching and MOCVD regrowth

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2 Author(s)
Ikawa, Seiji ; Electrotech. Lab., Tsukuba, Japan ; Ogura, Mutsuo

Vertical facets and oblique sidewalls are realized in AlGaAs-GaAs graded index separate confinement (GRINSCH) structure along the [01~1] and [01~1~] direction, respectively, with C/sub 2/H/sub 5/Cl gas-phase etching under a SiO/sub 2/ stripe mask. They are immediately embedded with consecutive MOCVD regrowth all around the active layer, to form optical windows and BH-type waveguide at the same time. This in situ process is very effective to reduce the fabrication cost of a semiconductor laser by combining the three processing steps of waveguide definition, facet formation, and facet coating into one consecutive gas manipulation in the same growth furnace.

Published in:

Photonics Technology Letters, IEEE  (Volume:9 ,  Issue: 6 )