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Tunnel injection active region in an oxide-confined vertical-cavity surface-emitting laser

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3 Author(s)
Huffaker, D.L. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Oh, T.-H. ; Deppe, D.G.

Data are presented on oxide-confined AlGaAs-GaAs-InGaAs VCSEL's that use high-index half-wave GaAs spacer layers and electronic tunnel injection and confinement. To our knowledge, this is the first demonstration of tunnel injection in a vertical-cavity laser. Threshold currents range from 344 /spl mu/A for a 6.5-/spl mu/m diameter device to 151 /spl mu/A for a 1-/spl mu/m diameter device. The relatively high threshold currents are attributed to a detuned cavity and higher order transverse-mode operation.

Published in:

Photonics Technology Letters, IEEE  (Volume:9 ,  Issue: 6 )

Date of Publication:

June 1997

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