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High-performance SiC power devices and modules with high temperature operation

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6 Author(s)
Nakamura, T. ; ROHM CO., Ltd., Kyoto, Japan ; Nakano, Y. ; Sasagawa, M. ; Otsuka, T.
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The expectation for SiC devices in advanced power electronics applications for saving energy has been still larger. The 4H-SiC planer MOSFETs with high blocking voltage (1300 V) and large current (40 A) were fabricated. In addition, we have succeeded in fabricating the larger current (300 A) 4H-SiC trench MOSFET with low-on resistance (2.6 mΩ cm2). And, regarding high-temperature operation, SiC IPMs can be successfully fabricated by using a new bonding soldering method which can withstand even 400°C.

Published in:

VLSI Design, Automation and Test (VLSI-DAT), 2011 International Symposium on

Date of Conference:

25-28 April 2011