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Analysis of charging effects on highly resistive materials under electron irradiation by using transient-absorbed-current method

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6 Author(s)
Tsuno, Natsuki ; Hitachi Ltd., Central Research Laboratory, 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan ; Ominami, Yusuke ; Ohta, Hiroya ; Shinada, Hiroyuki
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Accumulation and relaxation properties of charge in highly resistive materials under electron irradiation were investigated by using an absorption current stimulated by sequential two-pulse electron beams. The amount of absorbed charge corresponding to induced surface charge was obtained from the time integration of the absorption component of the substrate current. The absorbed charge of both highly resistive poly-Si (109–1010 Ω cm) and SiO2 substrates increases to 35 nC/cm2 with increasing injected charge and saturates; in contrast, there is a significant difference in absorbed charges for the two substrates at low injected charge (i.e., less than 1 μC/cm2). The time constant of absorbed-charge relaxation is obtained from the analysis of sequential absorbed current, namely, 0.4 ms for poly-Si and 12.5 ms for SiO2. A distinct voltage-contrast image of poly-Si plugs buried in a SiO2 film was successfully obtained by scanning electron microscopy with charging control in accordance with the difference in the charging characteristics of poly-Si and SiO2.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:29 ,  Issue: 3 )