Referenced Items are not available for this document.
A new method to extract the series resistance (Rs) of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) is proposed. Different from conventional methods, this method is based on an analytical poly-Si TFT model and is insensitive to channel length and mobility variations. This method is demonstrated in both n- and p-type poly-Si TFTs.
Published in:
Electron Device Letters, IEEE
(Volume:32
,
Issue:
7
)
Date of Publication: July 2011
- Page(s):
- 901 - 903
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 12083448
- Digital Object Identifier :
- 10.1109/LED.2011.2142391
- Product Type:
- Journals & Magazines
- Date of Publication :
- 27 May 2011
- Date of Current Version :
- 27 June 2011
- Issue Date :
- July 2011
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
