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Series Resistance Extraction in Poly-Si TFTs With Channel Length and Mobility Variations

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3 Author(s)
Yan Zhou ; Dept. of Microelectron., Soochow Univ., Suzhou, China ; Mingxiang Wang ; Man Wong

A new method to extract the series resistance (Rs) of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) is proposed. Different from conventional methods, this method is based on an analytical poly-Si TFT model and is insensitive to channel length and mobility variations. This method is demonstrated in both n- and p-type poly-Si TFTs.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 7 )