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Design and characterization of a highly linear 3 GHz GaN HEMT amplifier

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6 Author(s)
Pirooz Chehrenegar ; GigaHertz Centre, Microtechnology and Nanoscience-MC2, Chalmers University of Technology, SE 412 96 Göteborg, Sweden ; Olle Axelsson ; Jan Grahn ; Niklas Rorsman
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In this paper a highly linear amplifier using an in-house gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. A 3 dB bandwidth of 2.7-3.6 GHz with a maximum gain of 18 dB was measured. The output third-order intercept point (OIP3) was measured to 39 dBm with a maximum power consumption of 2.1 W. With a reduction of power consumption to 1 W the noise figure was improved by 0.6 dB while the OIP3 was degraded 3 dB.

Published in:

Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2011 Workshop on

Date of Conference:

18-19 April 2011