Referenced Items are not available for this document.
We propose a novel double heterojunction bipolar transistor (DHBT)-based capacitorless one-transistor (1T) DRAM cell employing a narrow bandgap SiGe body and Si/SiGe heterojunction for a possible next-generation DRAM cell. It has a body with a narrow bandgap and a valence band offset between the source/drain and the body. Through an extended investigation via TCAD simulation, we verified the advantages of the proposed DHBT-based 1T DRAM cell, including an improved excess carrier generation rate, a high current gain, a large sensing margin, and a suppressed sensitivity to the bandgap-narrowing effect in the heavily doped source and drain.
Published in:
Electron Device Letters, IEEE
(Volume:32
,
Issue:
7
)
Date of Publication: July 2011
- Page(s):
- 850 - 852
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 12083442
- Digital Object Identifier :
- 10.1109/LED.2011.2142390
- Product Type:
- Journals & Magazines
- Date of Publication :
- 23 May 2011
- Date of Current Version :
- 27 June 2011
- Issue Date :
- July 2011
- Sponsored by :
- IEEE Electron Devices Society
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