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On the Electron and Hole Tunneling in a  \hbox {HfO}_{2} Gate Stack With Extreme Interfacial-Layer Scaling

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4 Author(s)
Ando, Takashi ; T.J. Watson Res. Center, IBM, Yorktown Heights, NY, USA ; Sathaye, N.D. ; Murali, K.V.R.M. ; Cartier, E.A.

With decreasing SiO2 interfacial-layer (IL) thickness, gate currents in SiO2/HfO2 dual-layer gate stacks are observed to undergo drastic changes. For an IL thickness below 3 Å, a transition from hole-current-dominated transport to electron-current-dominated transport is observed near operating bias conditions in p-channel field-effect transistors. A tunneling simulation based on the transfer-matrix approach suggests that the band offsets for the SiO2 and HfO2 layers are reduced in the submonolayer IL regime ( <; 3 Å), promoting the transition in the conduction mechanism.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 7 )