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Polarity controlled InAs{111} films grown on Si(111)

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2 Author(s)
Ohtake, Akihiro ; National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan ; Mitsuishi, Kazutaka

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InAs heteroepitaxy on Si(111) has been studied using scanning tunneling microscopy and high-angle annular dark-field scanning transmission electron microscopy. The growth mode and polarity of the InAs{111} films drastically change, depending on the pregrowth treatment of Si(111) surfaces. High-quality (111)A-oriented InAs films are two-dimensionally grown on the In-terminated Si(111)-(4×1) surface, while large three-dimensional InAs islands were formed on the Si(111)-(7×7) and Si(111)-(1×1)–As surfaces. Two-dimensional InAs(111)B islands were obtained by supplying an As molecular beam on the In crystals formed on the As-terminated Si(111)-(1×1) surface. The authors also performed growth experiments of GaAs and In0.5Ga0.5As on In-terminated Si(111) and found that the two-dimensional growth is more promoted as the In content (i.e., lattice mismatch) is increased.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:29 ,  Issue: 3 )