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A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension

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4 Author(s)
Woongje Sung ; Future Renewable Electric Energy Delivery and Management Systems Center, North Carolina State University, Raleigh, NC, USA ; Edward Van Brunt ; B. J. Baliga ; Alex Q. Huang

A new edge termination method, referred to as multiple-floating-zone junction termination extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC. 4H-SiC PiN rectifiers with a breakdown voltage of 10 kV (about 88% of the theoretical value) were fabricated using MFZ-JTEs. The MFZ-JTE technique only requires a single pattern-and-implant step while providing significant process latitude for parameter variations such as implantation dose and activation anneal condition.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 7 )