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Optimized Germanium co-implant with B2H6 PLAD for better advanced PMOS device performance

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4 Author(s)
Liu, J.L. ; Micron Technol., Inc., Boise, ID, USA ; Shu Qin ; Hu, J. ; McTeer, A.

The following abstracts are given: Optimized Germanium Co-Implant with B2H6 PLAD for Better Advanced PMOS Device Performance; Design of low noise CMOS charge pump with adjustable output voltage and adjustable power; Measurement and Simulation of Various Geometries of LTCC Electron Hop Funnels; Efficient Design and Synthesis of Decimation Filters for Wideband Delta-Sigma ADCs; A Novel Material Solution for Non Volatile Contact Bridge Memristive Memory Fabrication; Radiation induced effects in pure and Ag doped Ge-Se films; and Design Techniques for a 70 Gbps CMOS Multiplexer.

Published in:

Microelectronics and Electron Devices (WMED), 2011 IEEE Workshop on

Date of Conference:

22-22 April 2011