By Topic

Surface stiffness modification by e-beam irradiation for stem cell growth control

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Lu, Bing-Rui ; Department of Microelectronics, State Key Lab of ASIC & System, Fudan University, Shanghai 200433, People’s Republic of China and Micro and Nanotechnology Center, Rutherford Appleton Laboratory, STFC, Chilton, Didcot, Oxon OX11 0QX, United Kingdom ; Lanniel, Mathieu ; Alexandar, Morgan ; Ran Liu
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

This article reports a novel method to effectively modify the surface stiffness for the differentiation of stem cell growth. To achieve large range of surface hardness, focused electron beam is first employed to radiate hydrogen silsesquioxane (HSQ) film. With different degrees of curing caused by certain e-beam exposure, the HSQ demonstrates various Young’s modulus from 0.5 to 2 GPa, measured by an atomic force microscope. Fourier transform infrared spectra were used to investigate the origin of the stiffness change, which is due to the e-beam irradiation induced network formation inside HSQ. The novel technique possesses a number of advantages such as precision control of stiffness in a broad matrix with high spatial resolution. It also offers a good opportunity to define the geometry shape with a constant stiffness in nanometer scale.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:29 ,  Issue: 3 )