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Surface stiffness modification by e-beam irradiation for stem cell growth control

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6 Author(s)
Lu, Bing-Rui ; Department of Microelectronics, State Key Lab of ASIC & System, Fudan University, Shanghai 200433, People’s Republic of China and Micro and Nanotechnology Center, Rutherford Appleton Laboratory, STFC, Chilton, Didcot, Oxon OX11 0QX, United Kingdom ; Lanniel, Mathieu ; Alexandar, Morgan ; Ran Liu
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This article reports a novel method to effectively modify the surface stiffness for the differentiation of stem cell growth. To achieve large range of surface hardness, focused electron beam is first employed to radiate hydrogen silsesquioxane (HSQ) film. With different degrees of curing caused by certain e-beam exposure, the HSQ demonstrates various Young’s modulus from 0.5 to 2 GPa, measured by an atomic force microscope. Fourier transform infrared spectra were used to investigate the origin of the stiffness change, which is due to the e-beam irradiation induced network formation inside HSQ. The novel technique possesses a number of advantages such as precision control of stiffness in a broad matrix with high spatial resolution. It also offers a good opportunity to define the geometry shape with a constant stiffness in nanometer scale.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:29 ,  Issue: 3 )

Date of Publication:

May 2011

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