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Performance evaluation of low-voltage silicon and GaN power FETs is presented for chip-scale DC-DC power converter applications. The circuit calculations are based on an improved circuit model for the FET with accurate description of terminal capacitances and on-resistance. It is shown that GaN power FETs combined with silicon MOS power diodes can potentially lead to nearly 82% power conversion efficiency at 25°C for a 12V/1V, 10W DC-DC converter when switched at 5 MHz in a synchronous buck converter topology.
Published in:
Green Technologies Conference (IEEE-Green), 2011 IEEE
Date of Conference: 14-15 April 2011
- Page(s):
- 1 - 5
- E-ISBN :
- 978-1-61284-714-6
- Print ISBN:
- 978-1-61284-713-9
- INSPEC Accession Number:
- 11971247
- Conference Location :
- Baton Rouge, LA
- Digital Object Identifier :
- 10.1109/GREEN.2011.5754851
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