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Performance Evaluation of Point-of-Load Chip-Scale DC-DC Power Converters Using Silicon Power MOSFETs and GaN Power HEMTs

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2 Author(s)
K. Shah ; Dept. of Electr. Eng. & Comput. Sci., Univ. of Toledo, Toledo, OH, USA ; K. Shenai

Performance evaluation of low-voltage silicon and GaN power FETs is presented for chip-scale DC-DC power converter applications. The circuit calculations are based on an improved circuit model for the FET with accurate description of terminal capacitances and on-resistance. It is shown that GaN power FETs combined with silicon MOS power diodes can potentially lead to nearly 82% power conversion efficiency at 25°C for a 12V/1V, 10W DC-DC converter when switched at 5 MHz in a synchronous buck converter topology.

Published in:

2011 IEEE Green Technologies Conference (IEEE-Green)

Date of Conference:

14-15 April 2011