Skip to Main Content
This letter presents a study on the feasibility of a new approach for developing a piezoresistive (PR) stress-sensing rosette that is capable of extracting the six stress components with temperature compensation using single-polarity sensing elements (n-type only). Current publicly available PR 3-D stress rosettes extract only four temperature-compensated stresses using a dual-polarity (n- and p-type) rosette. Our proposed approach generates a new set of independent equations based on varying the impurity concentration of the sensing elements and utilizes the distinct properties of the shear PR coefficient (π44) in n-Si. Fabrication of a single-polarity rosette requires less equipment compared to that of a dual-polarity rosette and helps reduce the footprint of the rosette.