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Technology design of IGBT

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3 Author(s)
Artem Artamonov ; Micro- and Nanoelectronics Department, Belarusian State University of Informatics and Radioelectronics, 6, P. Brovky str., Minsk, 220013, BELARUS ; Vladislav Nelayev ; Ibrahim Shelibak

Power semiconductor devices are important microelectronics components determined with the efficiency, size, and cost of electronic systems for energy application. Exact design of the modern element base of microelectronics provides reliable operation of the system. Results of the technology design of the IGBT structure are presented and discussed. Obtained data are needed for following calculations of the IGBT transistor electrical features. Presented results were obtained by means of Silvaco program package intended for technology/devise simulation.

Published in:

CAD Systems in Microelectronics (CADSM), 2011 11th International Conference The Experience of Designing and Application of

Date of Conference:

23-25 Feb. 2011