By Topic

Removal of Crystal Orientation Effects on the Current Gain of 4H-SiC BJTs Using Surface Passivation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
R. Ghandi ; School of Information and Communication Technology, Royal Institute of Technology, KTH, Stockholm, Sweden ; B. Buono ; C. -M. Zetterling ; M. Domeij
more authors

In this letter, the dependence of current gain and base resistance on crystal orientations for single-finger 4H-SiC bipolar junction transistors (BJTs) is analyzed. Statistical evaluation techniques were also applied to study the effect of surface passivation and mobility on the performance of the devices. It is shown that BJTs with an emitter edge aligned to the [1210] direction shows a lower current gain before surface passivation and higher base resistance after contact formation compared with other investigated crystal directions. However, the devices show a similar current gain independent of the crystal orientation after surface passivation.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 5 )