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Improvement in the performance of ZnO thin film transistors by using ultralow-pressure sputtering

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7 Author(s)
Soo Huh, Myung ; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea and R&D Center, Samsung Mobile Display, Co., Ltd., Gyeonggi-do, 449-902, Korea ; Won, Seok-Jun ; Yang, Hoichang ; Oh, Seungha
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Thin film transistors (TFTs) were fabricated with a zinc oxide (ZnO) channel deposited by ultralow-pressure sputtering (ULPS) at a pressure less than 1.3×10-3 Pa. The field-effect mobility FE) and the subthreshold gate swing (SS) of the ULPS-ZnO TFTs were dramatically improved up to 8.5 cm2/Vs and 0.31 V/decade, respectively, compared to 1.6 cm2/Vs and 1.31 V/decade for the ZnO TFTs fabricated by a conventional sputtering pressure (CSP) of 6.7×10-1 Pa. The improved characteristics of the ULPS-ZnO TFTs compared to the CSP-ZnO one can be attributed to the greater densification of the ZnO semiconductor film at the lower deposition pressure.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:29 ,  Issue: 3 )

Date of Publication:

May 2011

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