Influence of die attachment on MOS transistor matching

A test chip which allows the experimental study of the influence of die residual stresses on MOS transistor matching, in a standard 0.7 /spl mu/m CMOS technology, is described. The influence of eutectic die bonding on transistor matching is found to be a major degradation factor. Polyimide bonded dies do not significantly affect the matching performance of MOS transistors.