By Topic

Low temperature processing of indium-tin-zinc oxide channel layers in fabricating thin-film transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
9 Author(s)
Lee, Ki Chang ; School of Materials Science and Engineering, Kyungpook National University, Daegu 702-701, South Korea ; Jo, Kwang-Min ; Sung, Sang-Yun ; Lee, Joon-Hyung
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3553205 

The authors report on the fabrication of thin-film transistors (TFTs) using indium-tin-zinc oxides (ITZOs) as active channel layers. Transparent amorphous ITZO semiconductors were deposited at room temperature by rf-magnetron sputtering, followed by an annealing treatment at 100 °C. The electrical properties of the ITZO channel layers deposited at room temperature using rf-magnetron sputtering were investigated by controlling the oxygen partial pressure during deposition and introducing postannealing treatments. The devices operated in an n-type enhancement mode exhibited a clear pinch-off behavior and had an on-to-off ratio of ∼108 with a low off current of 3×10-13 A. A field-effect mobility of 17 cm2/Vs and a subthreshold slope of 0.5 V/decade were extracted from the device characteristics. These results suggest that ITZO semiconductors show potential as channel materials that are applicable in flexible transparent TFTs.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:29 ,  Issue: 2 )