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Improvement of Current Gain in 4H-SiC BJTs by Surface Passivation With Deposited Oxides Nitrided in 
or NO
Improvement of Current Gain in 4H-SiC BJTs by Surface Passivation With Deposited Oxides Nitrided in
We report the improvement of current gain in 4H-SiC bipolar junction transistors (BJTs) by utilizing deposited oxides as a surface passivation layer. Various post deposition annealing processes, including annealing ambient (N2, N2O, and NO) and annealing time, were investigated. We successfully demonstrate SiC BJTs with high current gains (β) of 73 and 102 using deposited oxides annealed in N2O and NO, respectively, whereas BJTs having conventional thermally grown oxides showed a current gain of 50.
Published in:
Electron Device Letters, IEEE
(Volume:32
,
Issue:
3
)
Date of Publication: March 2011
- Page(s):
- 285 - 287
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 11834007
- Digital Object Identifier :
- 10.1109/LED.2010.2101575
- Product Type:
- Journals & Magazines
- Date of Publication :
- 04 February 2011
- Date of Current Version :
- 22 February 2011
- Issue Date :
- March 2011
- Sponsored by :
- IEEE Electron Devices Society
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