9nm half-pitch functional resistive memory cell with <1µA programming current using thermally oxidized sub-stoichiometric WOx film

Record 9nm half-pitch functional Transition-Metal-Oxide based Resistive Random Access Memory (TMORRAM) cell and the lowest reported 1µA programming current (I
prog
, both Set and Reset) have been achieved with thermally oxidized sub-stoichiometric WO
x
and Nano Injection Lithography (NIL) technique [1]. The unexpectedly low programming current at 9nm diameter has been examined in-depth, it offers potential for scaling low power non-volatile memory. This small device shows Reset/Set resistance ratio around 10, stability during read operation, and good data-retention. A switching mechanism based on oxygen-ion dynamics can account for the observed device characteristics as discussed in this work.