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Modeling the breakdown statistics of gate dielectric stacks including percolation and progressive breakdown

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3 Author(s)
Sune, J. ; Dept. d''Eng. Electron., Univ. Autonoma de Barcelona, Barcelona, Spain ; Wu, E.Y. ; Tous, S.

Experiments reveal that the breakdown-related failure of high-K stack dielectrics is affected both by percolation effects and by progressive breakdown. A model is developed for the failure distribution that includes both phenomena on equal grounds. The model is shown to be applicable in the presence of multiple breakdown spots in competition.

Published in:

Electron Devices Meeting (IEDM), 2010 IEEE International

Date of Conference:

6-8 Dec. 2010

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