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6Å EOT Si0.45Ge0.55 pFETs with 10 year lifetime at operating conditions (VDD=1V) are demonstrated. Ultra-thin EOT is achieved by interfacial layer (IL) scavenging. Negative Bias Temperature Instability (NBTI) is alleviated using a high Ge fraction, a thick SiGe quantum well (QW) and a thin Si cap. Hot Carrier Injection (HCI) and Time Dependent Dielectric Breakdown (TDDB) are shown also to not constitute a showstopper for optimized SiGe devices.
Electron Devices Meeting (IEDM), 2010 IEEE International
Date of Conference: 6-8 Dec. 2010