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Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures

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9 Author(s)
Lo, C.-F. ; Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 ; Liu, L. ; Chang, C. Y. ; Ren, F.
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Ti/Al/Ni/Au Ohmic contact metallization on InAlN/GaN heterostructures both with and without a thin GaN cap layer was annealed at different temperatures. The minimum transfer resistance for the contacts of 0.65 Ω  mm (specific contact resistivity of 2×10-5 Ω cm2) was achieved after 800 °C annealing for structures without the GaN cap, while those with the cap exhibited their lowest resistance at higher temperatures. The contact morphology showed considerable roughening by 750 °C but the carrier mobility was stable until annealing temperatures of 850 °C. Diffuse scattering experiments showed that the morphological roughness of the InAlN/GaN interface increased as a result of annealing at these temperatures and the data were consistent with outdiffusion of Ga into the InAlN. Unpassivated high electron mobility transistors with a gate dimension of 0.7×180 μm2 were fabricated using these contacts and showed a maximum drain current of 1.3 A/mm and an extrinsic transconductance of 366 mS/mm. The presence of the GaN cap increased the effective barrier height of Ni/Au Schottky contacts from 0.91 to 1.01 eV on the heterostructure.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:29 ,  Issue: 2 )

Date of Publication:

Mar 2011

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