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Implementation of a 4∶1 multiplexing quantum-effect IC based on RTD circuit topology

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3 Author(s)
Jongwon Lee ; Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-Dong Yeseong-Gu, Daejeon, Republic of Korea ; Sunkyu choi ; Kyounghoon Yang

A quantum-effect 4:1 multiplexing IC using Resonant Tunneling Diodes is proposed and fabricated The new proposed IC has been designed based on the power-efficient NDR (negative differential resistance) topology of four CML-MOBILEs, which has the features of low-power and high speed by means of the unique NDR characteristics of the RTD. The 4:1 multiplexing operation of the proposed circuit is confirmed by implementing the circuit using an InP MMIC technology. The fabricated IC has operated up to 30 Gb/s with a low dc-power consumption of 87 m W for a supply voltage of -3.3 V This result shows the first demonstration of the low-power high-speed 4:1 multiplexing IC based on the quantum-effect device technology.

Published in:

Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on

Date of Conference:

17-20 Aug. 2010