By Topic

Non-Volatile semiconductor memories for nano-scale technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Fabio Pellizzer ; Micron, Process R&D, Agrate Brianza (MI), Italy ; Roberto Bez

In this paper we will review the evolution of Non-Volatile Memories (NVM) through the last decades, driven by a continuous introduction of new materials that helped the reduction of the single cell area and so the cost of the memory. As we entered into the sub-20 nm realm, limitations are appearing for Flash memories and alternative physical mechanisms are proposed to store information in high density media. In this scenario, Phase Change Memory (PCM) is demonstrating the capability to enter the broad memory market and to become a mainstream technology.

Published in:

Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on

Date of Conference:

17-20 Aug. 2010