Referenced Items are not available for this document.
In this paper we will review the evolution of Non-Volatile Memories (NVM) through the last decades, driven by a continuous introduction of new materials that helped the reduction of the single cell area and so the cost of the memory. As we entered into the sub-20 nm realm, limitations are appearing for Flash memories and alternative physical mechanisms are proposed to store information in high density media. In this scenario, Phase Change Memory (PCM) is demonstrating the capability to enter the broad memory market and to become a mainstream technology.
Published in:
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Date of Conference: 17-20 Aug. 2010
- Page(s):
- 21 - 24
- ISSN :
- 1944-9399
- E-ISBN :
- 978-1-4244-7031-0
- Print ISBN:
- 978-1-4244-7033-4
- INSPEC Accession Number:
- 11772535
- Conference Location :
- Seoul
- Digital Object Identifier :
- 10.1109/NANO.2010.5697736
- Product Type:
- Conference Publications
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