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High-Performance Implanted-Channel SiC MESFETs

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9 Author(s)

We demonstrate for the first time the development of state-of-the-art ion-implanted-channel SiC MESFETs with record dc and RF performance that is comparable to that of epitaxial-channel devices. MESFETs fabricated with this approach show a maximum stable gain exceeding 15.8 dB at 3.1 GHz in class-AB bias condition. An RF power output that is greater than 4 W/mm, with 63% drain efficiency, at 3.5 GHz was also achieved, showing the potential of these devices for high-power operation.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 3 )