Referenced Items are not available for this document.
Oxygen-Soluble Gate Electrodes for Prolonged High- 
Gate-Stack Reliability
Oxygen-Soluble Gate Electrodes for Prolonged High-
We propose the use of high-oxygen-solubility metalgate electrodes as a material of choice for high- gate stacks in order to prolong the time-dependent-dielectric-breakdown (BD) reliability. Our findings on n-channel metal-oxide-semiconductor devices with these gate electrodes reveal that the application of low negative bias stress after a soft-BD (SBD) event helps to restore the oxygen ions and passivate the oxygen vacancy traps that comprise the percolation path. This can be a simple yet effective designfor-reliability tool to initiate the self-repair of the percolation path and operate the circuit for a prolonged period after repair. The only requirement for achieving this SBD reversibility is to choose gate electrodes that can serve as good oxygen reservoirs.
Published in:
Electron Device Letters, IEEE
(Volume:32
,
Issue:
3
)
Date of Publication: March 2011
- Page(s):
- 252 - 254
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 11833967
- Digital Object Identifier :
- 10.1109/LED.2010.2099096
- Product Type:
- Journals & Magazines
- Date of Publication :
- 06 January 2011
- Date of Current Version :
- 22 February 2011
- Issue Date :
- March 2011
- Sponsored by :
- IEEE Electron Devices Society
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