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Preparation of ferroelectric capacitor films onto the releasable substrate and its application to nano-transfer method

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8 Author(s)
Ichiki, M. ; Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan ; Iimura, K. ; Hosono, T. ; Kuroki, K.
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High dielectric capacitor, that has around 1000 in dielectric constant, can be successfully formed by nanotransfer on non-heat-resisting substrates. PZT film could be released from the Si substrate and bonded onto the polymer one. The releasing characteristics have the relationships with the thickness of Pt layer. The formed PZT has perovskite structure and clear columnar texture. The proposal of the structure of electrode using Ti is shown in case of the stress film.

Published in:

CPMT Symposium Japan, 2010 IEEE

Date of Conference:

24-26 Aug. 2010