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An advanced step-graded Gunn diode (~ 100 GHz fundamental frequency) has been developed using a joint modelling-experimental approach to test GaAs based Gunn oscillators at sub-millimetre wavelengths. These devices are to be used as high power (multi-mW) Terahertz sources in conjunction with multipliers using Schottky diodes as the non-linear elements. The modelled-measured results of low series resistance Schottky diodes with non-alloyed contacts are also discussed.
Published in:
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Date of Conference: 25-27 Oct. 2010
- Page(s):
- 29 - 32
- Print ISBN:
- 978-1-4244-8574-1
- INSPEC Accession Number:
- 11697727
- Conference Location :
- Smolenice
- Digital Object Identifier :
- 10.1109/ASDAM.2010.5667005
- Product Type:
- Conference Publications
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