By Topic

Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
M. Mohamad Isa ; M&N Group, School of E&EE, The University of Manchester, UK ; D. Saguatti ; G. Verzellesi ; A. Chini
more authors

This paper presents a Novel low noise, high breakdown InAlAs/InGaAs pseudomorphic High Electron Mobility Transistors (pHEMTs). The improvements in breakdown voltage are brought about by a judicious combination of epitaxial layer design and field plate techniques. No significant degradations of DC and RF characteristics are observed for devices with field plate structures. An outstanding improvement in breakdown voltages of >30% is attained by field plate devices which should allow their usage in efficient high-added power efficiency amplifiers design.

Published in:

Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on

Date of Conference:

25-27 Oct. 2010