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Reactive ion etching of AlxGa1−xN/GaN heterostructure using Cl2, BCl3/Ar gas plasma

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8 Author(s)
W. Oleszkiewicz ; Wroclaw University of Technology, Faculty of Microsystem Electronic and Photonics, Janiszewskiego 11/17, 50-372 Wrocław, Poland ; J. Gryglewicz ; B. Paszkiewicz ; R. Paszkiewicz
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The etching processes were carried out in Oxford Instruments Plasmalab80Plus system. Present work is concentrating on discussion of a scope of different AlxGa1-xN/GaN heterostructures in relation to percentage composition of aluminum. The topography of heterostructure surface and slope was controlled using AFM technique.

Published in:

Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on

Date of Conference:

25-27 Oct. 2010