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A new width-dependent nonlinear relation to obtain body voltage (VB) in PD SOI MOSFET is presented. The new model is extracted based on the distributed nature of the body resistance (RB). Using 3-D simulations of an H-gate 45 nm PD SOI MOSFET, the body voltage variations along the device width were obtained. It was shown that the nonlinear relation approximates the 3-D simulation results. The proposed model was used to obtain the body resistance. Simulation results verified that the proposed model follows the non-linear variations of the body resistance as device width varies. The comparisons of the 3-D device simulation results and proposed body voltage relation show the effectiveness of the model on estimation of the body voltage (VB).
Date of Conference: 25-27 Oct. 2010