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New construction of the AlGaN/GaN/semi-insulating Schottky diode was proposed for operation at gigahertz regime. Based on the performed numerical simulations the planar diode with inter-digitated lay out was elaborated. The test structures of the diode was fabricated in AlGaN/GaN heterostructures grown on a c-plane sapphire by MOVPE technique. The d.c. and high frequency characteristics of the device were measured. The cut-off frequency, fT, of the diode was 8.2 GHz. The obtained results proved that inter-digitated Schottky diode fabricated in AlGaN/GaN heterostructure grown on semi-insulating substrate is suitable for high frequency operation at gigahertz regime and could be also monolithically integrated with HEMT.