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Noise in the InAlN/GaN HEMT transistors

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4 Author(s)
Rendek, K. ; Fac. of Electr. Eng. & Inf. Technol., Slovak Univ. of Technol., Bratislava, Slovakia ; Satka, A. ; Kovac, J. ; Donoval, D.

This paper deals with measuring and analyzing input and output low-frequency noise spectra of Gallium Nitride (GaN) based High Electron Mobility Transistors. Low-frequency noise spectral densities of drain noise voltage and gate noise current are shown. The three different measurements of input low-frequency noise of GaN HEMT transistor were measured for better revealing G-R noise sources in gate region and their influence to the output noise voltage. The long-term voltage off-stress was accomplished on the HEMT and impact to the low-frequency noise characteristics shown.

Published in:

Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on

Date of Conference:

25-27 Oct. 2010