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This paper deals with measuring and analyzing input and output low-frequency noise spectra of Gallium Nitride (GaN) based High Electron Mobility Transistors. Low-frequency noise spectral densities of drain noise voltage and gate noise current are shown. The three different measurements of input low-frequency noise of GaN HEMT transistor were measured for better revealing G-R noise sources in gate region and their influence to the output noise voltage. The long-term voltage off-stress was accomplished on the HEMT and impact to the low-frequency noise characteristics shown.