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Influence of thickness on transparency and sheet resistance of ITO thin films

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6 Author(s)
Michał Mazur ; Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372, Poland ; Danuta Kaczmarek ; Jarosław Domaradzki ; Damian Wojcieszak
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Microwave assisted reactive sputtering was applied to obtain homogeneous and high optical quality ITO thin films with thickness of 50, 100, 200 and 280 nm. Electrical properties of deposited ITO thin films were measured using standard four-point probe method together with transmission spectra of ITO thin films in the wavelength range from 330 nm to 880 nm. The figure of merit calculated for all samples has shown meaningful differences in performance of transparent conductive oxides. There was a big difference between 300 nm thick ITO thin films and other samples.

Published in:

Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on

Date of Conference:

25-27 Oct. 2010