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N-doped nanocrystalline silicon carbide films prepared by PECVD technology

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7 Author(s)
Boháček, P. ; Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia ; Huran, J. ; Valovič, A. ; Kobzev, A.P.
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This work presents the properties of nanocrystalline SiC(nc-SiC) films prepared by plasma enhanced chemical vapour deposition. A p-type silicon wafer with resistivity 2-7 Ωcm and (100) orientation was used as the substrate for the nc-SiC:H films. The concentration of species in the SiC films was determined by RBS and ERD. Chemical compositions were analyzed by IR spectroscopy. Film morphology was assessed by AFM. The RBS results showed the main concentrations of Si and C in the films. The concentration of hydrogen was approximately 20 at.%. IR results showed the presence of Si-C, Si-O, Si-N, Si-H, N-H, C-H, C-N specific bonds. Results of current-voltage (I-V) measurements before and after samples irradiation by neutrons are presented.

Published in:

Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on

Date of Conference:

25-27 Oct. 2010