InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous

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Abstract-We report an InPZIn_0.53Ga_0.47As/InP double heterojunction bipolar transistor (DHBT) demonstrating simultaneous 430-GHz f_τ and 800-GHz f_max. The devices were fabricated using a triple mesa process with dry-etched refractory metals for emitter contact formation. The devices incorporate a 30-nm-thick InP emitter semiconductor which enables a wet-etch emitter process demonstrating 270-nm-wide emitter-base junctions. At peak RF performance, the device is operating at 30 mW/μm² with J_c = 18.4 mA/μm² and V_ce = 1.64 V. The devices show a peak DC common-emitter current gain (β) ~ 20 and V_BR,CEO = 2.5 V.

Published in:
Electron Device Letters, IEEE (Volume:32 , Issue: 1 )

Date of Publication: Jan. 2011

Page(s):: 24 - 26
ISSN :: 0741-3106
INSPEC Accession Number:: 11704663
Digital Object Identifier :: 10.1109/LED.2010.2084069
Product Type:: Journals & Magazines

Date of Publication :: 11 November 2010
Date of Current Version :: 23 December 2010
Issue Date :: Jan. 2011
Sponsored by :: IEEE Electron Devices Society

Author(s)

Jain, V.
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Lobisser, E. ; Baraskar, A. ; Thibeault, Brian J. ; Rodwell, Mark J.W. ; Griffith, Z. ; Urteaga, M. ; Loubychev, D. ; Snyder, A. ; Wu, Y. ; Fastenau, J.M. ; Liu, W.K.