Band engineering of complex asymmetric multiple quantum wells for optically pumped semiconductor disk lasers

Asymmetric multiple quantum well active regions for optically-pumped semiconductor disk lasers (OPS-DLs) are designed employing wave function engineering within GaAs/AlGaAs material system, which provide simultaneously good electronic confinement, large gain and effective carrier transport. Experimental investigation has shown that such an approach gives record values of the conversion efficiency among OPSDLs and provides high values of the output power.