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On a possibility to reduce the electron beam energy used for pumping of ZnSe-based green semiconductor laser heterostructures

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10 Author(s)
Zverev, M. ; Moscow State Inst. of Radio Eng., Electron. & Automations, Moscow, Russia ; Gamov, N.A. ; Zdanova, E.V. ; Studionov, V.B.
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Temperature dependences of electron threshold current density in ZnSe-based laser heterostructures for the temperature range of 12-300 K and electron energies of 3.5-8.1 keV have been studied in detail. The minimum value of threshold current density of 0.2 A/cm2 has been measured at the electron energy E = 8 keV and temperature T = 50 K. The analysis of experimental and simulated data indicates on the possibility to reduce the electron energy at room temperature down to 1-2 keV value.

Published in:

Laser and Fiber-Optical Networks Modeling (LFNM), 2010 10th International Conference on

Date of Conference:

12-14 Sept. 2010

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