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On a possibility to reduce the electron beam energy used for pumping of ZnSe-based green semiconductor laser heterostructures

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10 Author(s)
M. M. Zverev ; Moscow State Institute of Radio Engineering, Electronics and Automations, Moscow, 117454 Russia ; N. A. Gamov ; E. V. Zdanova ; V. B. Studionov
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Temperature dependences of electron threshold current density in ZnSe-based laser heterostructures for the temperature range of 12-300 K and electron energies of 3.5-8.1 keV have been studied in detail. The minimum value of threshold current density of 0.2 A/cm2 has been measured at the electron energy E = 8 keV and temperature T = 50 K. The analysis of experimental and simulated data indicates on the possibility to reduce the electron energy at room temperature down to 1-2 keV value.

Published in:

Laser and Fiber-Optical Networks Modeling (LFNM), 2010 10th International Conference on

Date of Conference:

12-14 Sept. 2010