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Single Event and Low Dose-Rate TID Effects in the DS16F95 RS-485 Transceiver

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4 Author(s)
Kelly, A.T. ; BAE Syst. Space Products & Syst., Manassas, VA, USA ; Fleming, P.R. ; Brown, R.D. ; Wong, F.

Characterization of single event and low dose-rate TID effects in National Semiconductor's DS16F95 Radiation-Hardened RS-485 Transceiver is eported. Onset LET for upsetof less than 5 MeV-cm2/mg was observed, and a dependency on operating condition was established. Samples under ELDRS nvestigation adhered to electrical specification after irradiation to 30 krd(Si) at 10 mrd(Si)/s.

Published in:

Radiation Effects Data Workshop (REDW), 2010 IEEE

Date of Conference:

20-23 July 2010

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