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Resistive switching-like behaviour of the dielectric breakdown in ultra-thin Hf based gate stacks in mosfets

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6 Author(s)
A. Crespo-Yepes ; Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona (UAB), 08193, Bellaterra (Spain) ; J. Martin-Martinez ; R. Rodriguez ; M. Nafria
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The gate dielectric breakdown (BD) reversibility in MOSFETs with ultra-thin hafnium based high-k dielectric is studied. The phenomenology is analyzed in detail and the similarities with the resistive switching phenomenon emphasized. The results suggest that the conductive path in the dielectric after BD can be `opened' and `closed' many times and that the BD recovery partially restores not only the current through the gate, but also the MOSFET channel related electrical characteristics.

Published in:

2010 Proceedings of the European Solid State Device Research Conference

Date of Conference:

14-16 Sept. 2010