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Si-tunneling field effect transistors (TFETs) with a record Ion >100 μA/μm and high Ion/Ioff ratio (> 105) at Vds=1V are reported. Using an optimal spike and millisec flash anneal coupled with an engineered source-gate overlap through a gate-last process, Si TFETs have been demonstrated with 10 to 1000 times greater current than previously reported. The devices exhibit negative differential resistance and temperature dependencies consistent with band-to-band tunneling and current characteristics in excellent agreement with 2D TCAD simulations.
Date of Conference: 14-16 Sept. 2010