Referenced Items are not available for this document.
This paper deals with a new and low cost embedded DRAM (eDRAM) architecture. COLK (Capacitor Over Low K) cell with capacitor placed in the first and thick SiO2 dielectric has been successfully integrated. 4Mb eDRAM testchip using this new architecture is functional in 45 nm node and presents good yield. Moreover we succeed to demonstrate the capability to continue downscaling of eDRAM for nodes down to 32 nm and 22nm.
Published in:
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Date of Conference: 14-16 Sept. 2010
- Page(s):
- 158 - 161
- ISSN :
- 1930-8876
- Print ISBN:
- 978-1-4244-6658-0
- INSPEC Accession Number:
- 11626321
- Conference Location :
- Sevilla
- Digital Object Identifier :
- 10.1109/ESSDERC.2010.5618417
- Product Type:
- Conference Publications
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