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A novel lossy and dispersive interconnect model for integrated circuit simulation

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3 Author(s)
Yuan, J.-S. ; Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA ; Eisenstadt, W.R. ; Liou, J.J.

A method of modeling first-level metal interconnect signal transmission on silicon substrates with arbitrary doping profiles has been developed. The novel interconnect model includes the effects of signal attenuation and signal dispersion encountered in fast transient waveform propagation. Analytical modeling and PISCES device simulation are used for interconnect model development. SPICE simulation of the model shows good agreement with measurements

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Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:13 ,  Issue: 2 )