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Data-Dependent Statistical Memory Model for Passive Array of Memristive Devices

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3 Author(s)
Sangho Shin ; Sch. of Eng., Univ. of California-Merced, Merced, CA, USA ; Kyungmin Kim ; Kang, S.-M.S.

A 2 × 2 equivalent statistical circuit model is presented to deal with sneak currents and random data distributions for n × m passive memory arrays of memristive devices. The data-dependent 2 × 2 circuit model enables a broad range of analysis, such as the optimum detection voltage margin, with computational efficiency and has no limit on the memory array size. In addition, we propose replica-based self-adaptable sense resistors to achieve both low-power reading and large voltage detection windowing.

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Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:57 ,  Issue: 12 )