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Electron detection performance of diamond avalanche diode

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6 Author(s)
Morishita, Hideo ; Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan ; Ohshima, Takashi ; Hatano, Michio ; Iwakaji, Yoko
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The authors evaluated the electron detection performance of a diamond avalanche diode (DAD) detector. In the electrode region, the gain was uniformly about 103 with little noise. Meanwhile, an avalanche multiplication occurred locally. In the avalanche region, a total gain of 5×104 was obtained. In some regions where the electric field is regarded to be intensified, the avalanche multiplication gain was estimated to be approximately 100–300, and the signal-to-noise ratio (S/N) was nearly equal to 1. The DAD can be applied to an electron detector for a scanning electron microscope due to its high gain and small dark current. However, it is necessary to improve the S/N and homogenize the gain to use the DAD detector as an electron detector.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:28 ,  Issue: 6 )