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Signal integrity analysis of through-silicon via based 3D integrated circuit

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2 Author(s)
Er-Ping Li ; Electromagn. & Photonics Dept., A*STAR Inst. of High Performance Comput., Singapore, Singapore ; En-Xiao Liu

This paper presents an accurate compact scalable RLCG (Resistance, Inductance, Capacitance, and Conductance) model for electrical modeling of through-silicon vias in 3D IC packaging. Closed-form formulas for R and L are derived by full-wave approach, while C and G are taken from static solutions. The equivalent circuit model can capture almost all the parasitic effects, such as skin, proximity and MOS capacitance effect of through-silicon vias and the effect of lossy silicon. Therefore, it yields accurate results comparable to the full-wave solver.

Published in:

Signals Systems and Electronics (ISSSE), 2010 International Symposium on  (Volume:2 )

Date of Conference:

17-20 Sept. 2010