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UV ozone passivation of the metal/dielectric interface for HfO2-based organic thin film transistors

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5 Author(s)
Tang, W.M. ; Department of Electrical and Computer Engineering, University of Toronto, 10 King’s College Rd., Toronto, Ontario M5S 3G4, Canada ; Ng, W.T. ; Helander, M.G. ; Greiner, M.T.
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Ultraviolet (UV) ozone passivation of the metal/dielectric interface was investigated in HfO2-based devices. It is found that the passivation of Al gate reduces the gate leakage current by two orders of magnitude and increases the breakdown field strength by 14%. A thicker wide-band gap Al2O3 interlayer formed on the Al gate during UV ozone treatment improves the interface quality and suppresses the leakage associated with the high-k material. Copper phthalocyanine-based organic thin-film transistors with HfO2 as gate dielectric were fabricated on glass. UV ozone passivated devices exhibited a low threshold voltage of -0.29 V and a low subthreshold slope of 0.38 V/decade, demonstrating the advantage of UV ozone passivation.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:28 ,  Issue: 6 )