Different growth mechanisms of vertical carbon nanotubes by rf- or dc-plasma enhanced chemical vapor deposition at low temperature

Vertically aligned carbon nanotubes (CNTs) were synthesized using FeNi or Fe sputtered catalyst layers on glass substrates by radio frequency or direct current plasma enhanced chemical vapor deposition (rf- or dc-PECVD). This article compared the growth mechanisms of CNTs synthesized by rf- and dc-PECVD, based on gas flow rate, plasma power, and catalysts. Tip growth CNTs were produced at 180 °C, 10 SCCM (SCCM denotes cubic centimeter per minute at STP) CH₄, and 30 W by rf-PECVD using 8 or 4 nm FeNi or 4 nm Fe island films sputtered onto glass substrates. CNTs could not grow using dc-PECVD under the same deposition conditions; tip growth of CNTs occurred at 180 °C, 15 SCCM CH₄, and 50 W using dc-PECVD with sputtered FeNi island catalysts on increasing the plasma power and CH₄ flow rate. This article explained why rf-PECVD provided more efficient decomposition of gas molecules than dc-PECVD by plasma theory. The major difference between rf- and dc-PECVD was the higher concentration of reactive radicals in the former. However, in dc-PECVD, the CNT growth was well aligned vertically. FeNi thin film catalysts exhibited higher activity and better wetting ability than the Fe island thin film catalysts.